Jing-Jong Shyue, Ph.D.

103年上學期電子顯微鏡學

星期五上午09:10-12:20 工綜B03室

		Office	E-mail
Instructor	薛景中	中研院應科中心411B	shyue at gate.sinica.edu.tw
TA	高偉倫	中研院應科中心407C	d03527008 at ntu.edu.tw
Textbook	D.B. Williams and C.B. Carter, Transmission Electron Microscopy, 2009 (2nd Edition), Springer
Website	http://www.shyue.idv.tw/teaching.html

Workload	Homework	4 in total	10% each	40%
	Mid-term exam		30%	30%
	Final exam		30%	30%
	Total*			100%

* If the final class average falls below 70%, a curved scale will be used, with the class average set at or near 78%.

Homework policies:

Homework will be due in class at the second class meeting after it is assigned. Late homework will be subject to a penalty of 10% per day unless an extension has been arranged with the instructor prior to the due date. No late homework will be accepted after a solution set has been made available.
Homework must be legible, with questions answered in numerical order, and stapled if more than one page long. Please: no spiral-bound paper, or pages connected by folding the corners. Students may consult with one another on the homework, but what is handed in must be each student's original, individual work. Homework assignments (or portions thereof) from different students that appear to have been copied or that otherwise appear to be identical may be returned to all the submitters with zero credit.
The purpose of the homework is to illustrate, apply, and reinforce key topics, not to serve as dry runs for the tests.

Tests and Exams:

Students may bring pencils or pens, erasers, and straight edges to the tests. The tests and final exam will be closed-book, closed-notes. No formula sheets or any other forms of stored information are permitted. Each test will cover the lectures and reading assignments from the preceding third of the course. The final exam will cover material from throughout the course. Some of the test questions will be similar to the homework problems in style (i.e., short-answer; calculations; explanations of concepts), but some questions will require the student to apply previous material to new situations.

Syllabus

Lecture topics, readings, and dates of homework assignments are subject to change. Tests will cover the lecture content and the reading assignments.

Week	Date	Lecture Topic	Homework
1	9/19	Introduction [quicktime version] slides updated on 15/02/04
2	9/26	Instrumentation and Sample Preparation [quicktime version] slides updated on 15/02/04
3	10/3	Electron-Atom Interactions [quicktime version] slides updated on 15/02/04
4	10/10	Holiday
5	10/17	Scanning Electron Microscopy [quicktime version] slides updated on 15/02/04	#1 assigned
6	10/24	Electron Probe Microanalysis (EPMA) [quicktime version] slides updated on 15/02/04	#1 due
7	10/31	Diffraction [quicktime version] slides updated on 15/02/04	#2 asigned
8	11/7	Diffraction Patterns [quicktime version] slides updated on 15/02/04	#2 due
9	11/14	Mid-term exam
10	11/21	Contrast and Imaging [quicktime version] slides updated on 15/02/04
11	11/28	Imaging Defects [quicktime version] slides updated on 15/02/04
12	12/5	High-Resolution TEM [quicktime version] slides updated on 15/02/04
13	12/12	Simulation [quicktime version] slides updated on 15/02/04	#3 assigned
14	12/19	Analytical TEM (XEDS and EELS) [quicktime version] slides updated on 15/02/04	#3 due
15	12/26	Energy Filtered TEM [quicktime version] slides updated on 15/02/04
16	1/2	Scanning TEM [quicktime version] and special topics [quicktime version] slides updated on 15/02/04	#4 assigned
17	1/9	Review	#4 due
18	1/16	Final Exam

Rubric

		Excellent	Satisfactory	Needs work
General Microscopy	Importance of resolution	Abbe Theory Determined by wavelength Electron propagate like waves	Magnification is only meaningful with sufficient resolution	None of the above
General Microscopy	General crystal structure	Space group and point group Microscopic and macroscopic symmetry Zone axis	Index of plane and direction Reciprocal lattice	None of the above
Instruments	Role of each component	Function of each lens and difference in operation modes Effect of accelerating voltage Aberration of real lens and limitation of resolution	Different types of electron source Image rotations associated with focal length of lens	None of the above
Sample preparation	Scanning Electron Microscopy	Choice of sample mount	Effect of conductive overcoat	None of the above
Sample preparation	Transmission Electron Microscopy	Choice of different techniques for different type of specimen Post-cleaning of specimen	Application of Focused Ion Beam Choice of different supporting film	None of the above
Electron-Atom Interactions		Scattering cross-section Interaction volumes Signals from electro-atom interactions	Elastic and inelastic scattering Forward and back-scattering Single and multiple scattering	None of the above
Scanning Electron Microscopy	General SEM	Magnification and raster size Resolution limitation Operation modes for objective lens	Signal generation Depth of focus Resolution vs, current Kinetic energy of electrons	None of the above
	SE and BSE imaging	Yield of SE and BSE Low-vacuum and environmental SEM Effect of instrumental parameters on the image Signal processing	Classification of SE Contrast in SE and BSE imaging Operation of detectors	None of the above
	Advanced operation	Electron backscatter diffraction Auger electron spectroscopy	Channeling pattern EBIC CL	None of the above
Electron Probe Microanalysis	General EPMA	Inner-shell ionization X-ray fluorescence yield Interaction volume (lateral and depth distribution) Effect of beam energy Quantitative analysis (ZAF correction)	Characteristic x-ray and bremsstrahlung Selection rule of x-ray generation Qualitative analysis Accuracy of standard-less quantification X-ray imaging	None of the above
	X-ray wavelength dispersive spectroscopy	Selecting crystals for XWDS	Fully focused x-ray spectrometer Maximizing signal intensity	None of the above
	X-ray energy dispersive spectroscopy	Principle of Si(Li) and SDD Processing time and dead time ratio	Principle of pulse processing Role of collimater Detection solid angle Energy resolution of XEDS Artifacts in XEDS	None of the above
Diffraction	General diffraction	Fresnel and Fraunhofer diffraction Electron vs. x-ray diffraction Structure factor Properties of scattering vector	Electron waves and diffraction Atom form factor Bragg condition Laue equation Vector form of diffraction conditions Ewald construction	None of the above
Diffraction	Diffraction in TEM	Ewald construction for TEM Interpretation of TEM diffraction	Lattice factor Excitation error Laun zones	None of the above
Diffraction Patterns	Parallel beam electron diffraction	Determine the zone axis Effect of inelastic scattering Kikuchi lines and excitation error Dynamical and kinematical diffraction	Camera length Indexing of diffraction pattern Ring pattern Kikuchi lines and maps Extinction distance Double diffraction	None of the above
Diffraction Patterns	Convergent beam electron diffraction	Excess and deficiency lines High order Laue zone lines Determination of space groups	Information provided by CBED Microscope variables Determination of point groups	None of the above
Imaging	General	Rotation between image and diffraction pattern Mass-thickness contrast Diffraction contrast Phase contrast	Image recording on emulsion/CCD/CMOS Contrast generation in TEM BF/DF imaging Two-beam condition Artifacts in image	None of the above
	Imaging defects	Imaging stacking faults Imaging dislocations Weal-beam dark-field imaging Fresnel contrast	Visibility of lattice defects Imaging coherent particles Interference pattern (lattice fringe) Moiré pattern	None of the above
	High-resolution electron microscopy	Wave function at backfocal plane Wave function at imaging plane Weak phase object Point resolution and information limit Partial coherence	Definition of HREM Contrast generation Spatial frequency Transfer function Contrast transfer function Scherzer defocus Damping of CTF	None of the above
	Simulation	Applications of diffractogram Fourier filtering Electron holography Exit-wave reconstruction	Multislice method Bloch wave method Diffractogram Linear and non-linear image formation	None of the above
Analytical TEM	Inelastic scattering	Different types of inelastic scattering	Shell excitation Plasmon, phonon Continuous energy loss	None of the above
	XEDS	Quantitative analysis	Ge detector Position for XEDS detector	None of the above
	Electron energy loss spectrometry	Parameters characterizing EELS EELS in image and diffraction mode Inner-shell ionization: ELNES and EXELFS Quantitative EELS: partial ionization cross-section Background substraction	Hardware requirement Zero-loss peak Low-loss region High-loss region Shape of adsorption edge EELS vs XEDS Qualitative EELS	None of the above
	Energy filtered TEM	Energy-filtered diffraction Two- and three-window technique Electron tomography	Zero-loss filtering Electron-spectroscopic imaging Detection limit and spatial resolution of ESI	None of the above
Scanning TEM		STEM imaging techniques Reciprocity theorem HAADF imaging	STEM vs. TEM vs. SEM STEM detectors Effect of scattering angle (camera length)	None of the above

103年上學期 電子顯微鏡學

星期五 上午09:10-12:20 工綜B03室